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Narrow band photocurrent response from partially phase separated a-SiNx:H thin filmsPublished in American Institute of Physics Inc.
2014
DOI: 10.1063/1.4895600
Volume: 116
Issue: 11
We report static and dynamic photocurrent response from sub-stoichiometric a-SiNx:H thin films. The photocurrent spectral (PCS) response is peaked in the technologically important optical energy range of 2.2 to 4.5 eV. The transient photocurrent response with prolonged exposure is attributed to reduction in number of charge carriers due to trapping of photo-generated carriers at defect sites. The narrow PCS response is attributed to dominant photo-generation of carriers in the bandtails of stoichiometric Si3N4phase and subsequent transport through the excess Si network. © 2014 AIP Publishing LLC.
Topics: Photocurrent (62)%62% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Narrow band photocurrent response from partially phase separated a-SiNx:H thin films. Journal of Applied Physics 116, 11 p113501 (2014)] and may be found at https://doi.org/10.1063/1.4895600.
About the journal
| Journal | Data powered by TypesetJournal of Applied Physics |
|---|---|
| Publisher | Data powered by TypesetAmerican Institute of Physics Inc. |
| ISSN | 00218979 |
Authors (1)
Shahab Ahmad- Department of Physics IIT Jodhpur
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