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Nanogap electrode formation by sacrificial layer technique
S. Dhariwal, R. Prajesh,
Published in Institute of Electrical and Electronics Engineers Inc.
This paper presents a controlled lateral etching-based technique for realizing nanogap structures. These structures have applications in different bio-medical/ biochemical sensors. The sensitivity of such sensors depends on the gap size. The method method uses single mask lithography, followed by etching for the first electrode material and lift-off for the second electrode material. Controlled under-etching of the first metal layer defines the gap between two electrodes. Aluminum (0.7 μm) as metal one and titanium (0.2 μm) as metal two was used for fabricating nano-gap electrodes. Gap of 90 nm was achieved using the present technique. © 2014 IEEE.