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Multi-level memory-switching properties of a single brain microtubule
, S. Ghosh, K. Hirata, D. Fujita, A. Bandyopadhyay
Published in
2013
Volume: 102
   
Issue: 12
Abstract
We demonstrate that a single brain-neuron-extracted microtubule is a memory-switching element, whose hysteresis loss is nearly zero. Our study shows how a memory-state forms in the nanowire and how its protein arrangement symmetry is related to the conducting-state written in the device, thus, enabling it to store and process ∼500 distinct bits, with 2 pA resolution between 1 nA and 1 pA. Its random access memory is an analogue of flash memory switch used in a computer chip. Using scanning tunneling microscope imaging, we demonstrate how single proteins behave inside the nanowire when this 3.5 billion years old nanowire processes memory-bits. © 2013 American Institute of Physics.
About the journal
JournalApplied Physics Letters
ISSN00036951