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Modeling the impact of substrate depletion in FDSOI MOSFETs
P. Kushwaha, N. Paydavosi, S. Khandelwal, C. Yadav, , J.P. Duarte, C. Hu, Y.S. Chauhan
Published in Elsevier Ltd
Volume: 104
Pages: 6 - 11
In this work, we have modeled the impact of substrate depletion in fully-depleted silicon-on-insulator (FDSOI) transistor and have extensively verified the model for both NMOS and PMOS with geometrical and temperature scaling. The model has an accurate behavior for C-V and I-V characteristics and preserves the smooth behavior of the high order derivatives. Model validation is done at 50 nm technology node with state of the art FDSOI transistors provided by Low-power Electronics Association and Project (LEAP) and excellent agreement with the experimental data is achieved after parameter extraction. © 2014 Elsevier Ltd.
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JournalData powered by TypesetSolid-State Electronics
PublisherData powered by TypesetElsevier Ltd