Recently, experimental Germanium CMOS devices and circuit are reported for advanced technology nodes for the first time. In this paper, we have modeled Germanium On Insulator (GeOI) device with industry standard compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model. It is shown that BSIM-IMG with updated mobility model accurately captures static characteristics for both n-channel and p-channel devices, and reproduces experimental CMOS inverter characteristics. This is the first time, when a compact model is validated on experimental CMOS circuit operation of GeOI. © 2016 IEEE.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

P. Kushwaha

Y.S. Chauhan

S. Khandelwal

J.P. Duarte

Y.-K. Lin

H.-L. Chang

C. Hu

H. Wu

P.D. Ye

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Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model

2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Journal	Data powered by SciSpace2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Publisher	Data powered by SciSpaceInstitute of Electrical and Electronics Engineers Inc.