The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work . The transistor's characteristics are dominated by substrate parasitics at intermediate frequencies (0.1-10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley short-channel IGFET model-common multi gate model is improved to account for the impact of substrate coupling on the RF parameters. The model demonstrates excellent agreement with the measured data over a broad range of frequencies. The model passes AC, DC and RF symmetry tests, demonstrating its readiness for (RF) circuit design using FinFETs. © 1980-2012 IEEE.