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Modeling of advanced RF bulk FinFETs
P. Kushwaha, , Y.-K. Lin, M.-Y. Kao, J.-P. Duarte, H.-L. Chang, W. Wong, J. Fan, Xiayu, Y.S. ChauhanShow More
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 39
Issue: 6
Pages: 791 - 794
The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work [1]. The transistor's characteristics are dominated by substrate parasitics at intermediate frequencies (0.1-10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley short-channel IGFET model-common multi gate model is improved to account for the impact of substrate coupling on the RF parameters. The model demonstrates excellent agreement with the measured data over a broad range of frequencies. The model passes AC, DC and RF symmetry tests, demonstrating its readiness for (RF) circuit design using FinFETs. © 1980-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Electron Device Letters
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.