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Low Voltage Organic Field-Effect Transistors with Room Temperature Deposited Dielectric Layer
V. Raghuwanshi, A.K. Mahato, P. Saxena, S. Rahi, G. Konwar,
Published in Institute of Electrical and Electronics Engineers Inc.
Lowering the processing temperature is a crucial factor in the development of flexible electronic devices. Here we report the fabrication of high-performance OFETs based on room temperature deposited Ba0.5Sr0.5TiO3 (BST) as a high-k dielectric layer. The fabricated devices exhibited excellent performance while operating at a low voltage of -3 V along with demonstrating high operational stability when tested for 1 h bias stress and continuous transfer measurement cycles. In addition, inverter circuit performance is also investigated with these devices by connecting them to external loads. © 2021 IEEE.