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Low voltage driven RF MEMS capacitive switch using reinforcement for reduced buckling
D. Bansal, A. Bajpai, P. Kumar, M. Kaur, A. Kumar, A. Chandran,
Published in Institute of Physics Publishing
Volume: 27
Issue: 2
Variation in actuation voltage for RF MEMS switches is observed as a result of stress-generated buckling of MEMS structures. Large voltage driven RF-MEMS switches are a major concern in space bound communication applications. In this paper, we propose a low voltage driven RF MEMS capacitive switch with the introduction of perforations and reinforcement. The performance of the fabricated switch is compared with conventional capacitive RF MEMS switches. The pull-in voltage of the switch is reduced from 70 V to 16.2 V and the magnitude of deformation is reduced from 8 μ m to 1 μ m. The design of the reinforcement frame enhances the structural stiffness by 46 % without affecting the high frequency response of the switch. The measured isolation and insertion loss of the reinforced switch is more than 20 dB and 0.4 dB over the X band range. © 2016 IOP Publishing Ltd.
About the journal
JournalJournal of Micromechanics and Microengineering
PublisherInstitute of Physics Publishing