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Lead-Free Perovskite Semiconductors Based on Germanium-Tin Solid Solutions: Structural and Optoelectronic Properties
S. Nagane, D. Ghosh, R.L.Z. Hoye, B. Zhao, , A.B. Walker, M. Saiful Islam, S. Ogale, A. Sadhanala
Published in American Chemical Society
Volume: 122
Issue: 11
Pages: 5940 - 5947
Solar cells and optoelectronics based on lead halide perovskites are generating considerable interest but face challenges with the use of toxic lead. In this study, we fabricate and characterize lead-free perovskites based on germanium and tin solid solutions, CH3NH3Sn(1-x)GexI3 (0 ≤ x ≤ 1). We show that these perovskite compounds possess band gaps from 1.3 to 2.0 eV, which are suitable for a range of optoelectronic applications, from single junction devices and top cells for tandems to light-emitting layers. Their thermodynamic stability and electronic properties are calculated for all compositions and agree well with our experimental measurements. Our findings demonstrate an attractive family of lead-free perovskite semiconductors with a favorable band-gap range for efficient single-junction solar cells. © 2018 American Chemical Society.
About the journal
JournalData powered by TypesetJournal of Physical Chemistry C
PublisherData powered by TypesetAmerican Chemical Society