The indium nitride (InN)-based nanometric-objects were grown directly on a c-sapphire substrate by using plasma-assisted molecular beam epitaxy (PAMBE) at different substrate temperatures. High resolution X-ray diffraction (HRXRD) reveals the InN (0002) reflection and full width at half maximum (FWHM) found to be decreased with increasing the growth temperature. The size, height and density of the grown nanometric-objects studied by scanning electron microscopy (SEM) has remarkable differences, evidencing the decisive role of substrate temperature. Photoluminescence (PL) studies revealed that the emission energy is shifted towards the higher side from the bulk value, i.e., a blue shift in the PL spectra was observed. The temperature dependence of the PL peak position shows an "S-shaped" emission energy shift, which can be attributed to the localization of carriers in the nanometric-objects. Copyright © 2010 American Scientific Publishers.

Mahesh Kumar

Department of Electrical Engineering

IIT Jodhpur

B. Roul

M.K. Rajpalke

T.N. Bhat

N. Sinha

A.T. Kalghatgi

S.B. Krupanidhi

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Nanoscience and Nanotechnology Letters

Indium nitride nanometric-objects on c-sapphire grown by plasma-assisted molecular beam epitaxy

Journal	Nanoscience and Nanotechnology Letters
ISSN	19414900