Header menu link for other important links
Indium nitride (InN) nanostructures grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE)
N. Sinha, V.M. Jali, T.N. Bhat, B. Roul, , M.K. Rajpalke, S.B. Krupanidhi
Published in
Volume: 1393
Pages: 77 - 78
Indium nitride (InN) is an interesting and potentially important semiconductor material with superior electronic transport properties. Compared to all other group III-nitrides, InN possesses the lowest effective mass, the highest mobility, the highest saturation velocity and narrow band gap of 0.7-0.9 eV. The present paper deals with the fabrication of InN nanostructures on silicon and sapphire substrates by plasma-assisted molecular beam epitaxy. The droplet epitaxy and Stranski-Krastanov(S-K) growth modes were used to grow the nanostructures. © 2011 American Institute of Physics.
About the journal
JournalAIP Conference Proceedings