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Impact of back plane doping on RF performance of FD-SOI transistor
C.K. Dabhi, P. Kushwaha, A. Dasgupta, , Y.S. Chauhan
Published in Institute of Electrical and Electronics Engineers Inc.
In this paper, we presents the effect of higher back plane doping on analog figure of merit of fully depleted-silicon on insulator (FD-SOI) MOSFETs at RF frequencies. Procedure for DC and RF parameter extraction at RF frequencies has been discussed. Surface potential based Industry standard BSIM-IMG model for FD-SOI MOSFETs with enhanced gate parasitic network is used for validation of extracted DC and RF parameters such as gate resistance, gate parasitic capacitance, output conductance, transconductance. © 2016 IEEE.