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Highly Responsive Behavior Towards Acetone by WO 3 Based Bottom Gate Field Effect Transistor
P. Dwivedi, S. Soneja,
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 2018-October
This paper presents the performance of a nanostructured tungsten trioxide (WO 3 ) based bottom gate field effect transistor as a highly responsive gas sensor. The fabrication process followed is scalable and semiconductor industry compatible. Complete material and electrical characterization of the device was performed which shows WO 3 nano-clusters and ambipolar nature of the WO 3 based transistor. Sensing studies were carried out in presence of volatile organic compounds (VOCs) of which maximum response was given to acetone. Dynamic response was taken to demonstrate real time sensing. © 2018 IEEE.
About the journal
JournalData powered by TypesetProceedings of IEEE Sensors
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.