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Growth of Different Microstructure of MoS2 through Controlled Processing Parameters of Chemical Vapor Deposition Method
R. Kumar, N. Goel,
Published in Institute of Electrical and Electronics Engineers Inc.
The anisotropic bonding in layered materials crystallize to form different structure such as smooth films, nanotubes, and fullerene-like nanoparticles. Here, the growth of different microstructure of MoS2 via chemical vapor deposition (CVD) method through controlled processing parameters is reported. Scanning electron microscopy and Raman spectroscopy ascertained the MoS2 on insulating substrate (SiO2/Si). It was observed that poor sulfur environment and slow vapor flow were unable to induce complete transition from MoO3-x to MoS2 and formed intermediate MoO2.The MoS2 and MoO2/MoS2 heterostructure were synthesized via single step. In addition, by adjustment of heating rate with temperature of centre zone and vapor flow, flower like structure of MoS2 was achieved. © 2019 IEEE.