The fabrication of lateral ultra-narrow fin body (thickness ≤10 nm) gate-all-around MOSFETs, which exhibit excellent gate electrostatic control over the channel, is presented. The narrow fins were formed using alternating phase DUV lithography and low temperature oxidation of Si. The device characteristics are completely free from substrate bias effects.

Ajay Agrawal

Department of Electrical Engineering

IIT Jodhpur

N. Singh

L.K. Bera

R. Kumar

G.Q. Lo

B. Narayanan

D.L. Kwong

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Electronics Letters

Gate-all-around MOSFETs: Lateral ultra-narrow (≤10 nm) fin as channel body

Journal	Electronics Letters
ISSN	00135194