Radiation induced changes in the electrical properties of PbZrTiO3 (PZT) thin films have been studied for dosimetry application. The radiation detection was based on radiation induced changes in the electrical properties under the influence of gamma radiation. Epitaxial heterostructure of ferroelectric PbZr0.52 Ti0.48O3 (001)/SrRuO3 (SRO) were grown on single crystal SrTiO3 (001) substrates by pulsed laser deposition and platinum (Pt) electrode was deposited on top of the PZT film. The maximum capacitance of the heteroepitaxial capacitor devices was \approx ~25 pF with a corresponding small leakage current. The effect of gamma ( \gamma-ray) irradiation on the intrinsic electrical behavior of the Lead Zirconate Titanate (PZT) capacitor devices were explored in form of the current-voltage (I-V) and capacitance-voltage (C-V) properties. The PZT devices were exposed to a 60Co Gamma source with 2.8 kGy/h dose rate from 0 kGy to 400 kGy doses. Gamma radiation induced broadening was observed in full width half maxima (FWHM) of the x-ray diffraction (00l) peak with the increasing gamma doses. All devices showed a consistence changes in conductance and capacitance with increasing gamma doses. The results demonstrated linear relationship in electrical response of PZT thin-film capacitors as a function of gamma doses. The device showed significant changes in the values of current and capacitance with the increase in dose up to 400 kGy and are therefore suitable for high-dose dosimetry applications. © 1980-2012 IEEE.