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Fully gate-all-around silicon nanowire CMOS devices
N. Singh, K.D. Buddharaju, , S.C. Rustagi, G.Q. Lo, N. Balasubramanian, D.L. Kwong
Published in
Volume: 51
Issue: 5
Pages: 34 - 37
Although CVD-grown nanowires are good for demonstration purposes, getting them into manufacturing calls for the utilization of CMOS fabrication methods. We present fully CMOS-compatible nanowire technology with applications and fabrication challenges. Gate-all-around (GAA) silicon nanowire FETs are demonstrated with excellent gate electrostatic control and near ideal turn-on behavior. The nanowire CMOS inverter logic operates down to VDD = 0.2V and is indicative of the potential of these devices for ultra-low power applications toward the end-of-silicon technology roadmap. Finally, we discuss the challenges specific to an advanced dielectric/electrode scheme in nanowire technology.
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JournalSolid State Technology