Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation. © 2017, Pleiades Publishing, Ltd.

Mahesh Kumar

Department of Electrical Engineering

IIT Jodhpur

D.S. Korolev

A.A. Nikolskaya

N.O. Krivulin

A.I. Belov

A.N. Mikhaylov

D.A. Pavlov

D.I. Tetelbaum

N.A. Sobolev

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Formation of hexagonal 9R silicon polytype by ion implantation

Technical Physics Letters

Journal	Technical Physics Letters
Publisher	Maik Nauka-Interperiodica Publishing
ISSN	10637850
Open Access	No