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Formation of hexagonal 9R silicon polytype by ion implantation
D.S. Korolev
,
A.A. Nikolskaya
,
N.O. Krivulin
,
A.I. Belov
,
A.N. Mikhaylov
,
D.A. Pavlov
,
D.I. Tetelbaum
,
N.A. Sobolev
,
Mahesh Kumar
Published in Maik Nauka-Interperiodica Publishing
2017
DOI:
10.1134/S1063785017080211
Volume: 43
Issue: 8
Pages: 767 - 769
Abstract
Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation. © 2017, Pleiades Publishing, Ltd.
Topics:
Hexagonal phase
(59)%
59% related to the paper
,
Ion implantation
(57)%
57% related to the paper
and
Silicon
(55)%
55% related to the paper
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Formation of hexagonal 9R silicon polytype by ion implantation
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Authors (1)
About the journal
Journal
Technical Physics Letters
Publisher
Maik Nauka-Interperiodica Publishing
ISSN
10637850
Open Access
No
Authors (1)
Mahesh Kumar
Department of Electrical Engineering
IIT Jodhpur
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