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Formation of hexagonal 9R silicon polytype by ion implantation
D.S. Korolev, A.A. Nikolskaya, N.O. Krivulin, A.I. Belov, A.N. Mikhaylov, D.A. Pavlov, D.I. Tetelbaum, N.A. Sobolev,
Published in Maik Nauka-Interperiodica Publishing
Volume: 43
Issue: 8
Pages: 767 - 769
Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation. © 2017, Pleiades Publishing, Ltd.
About the journal
JournalTechnical Physics Letters
PublisherMaik Nauka-Interperiodica Publishing
Open AccessNo