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Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
S. Balakumar, T. Jun Wei, C.H. Tung, G.Q. Lo, H.S. Nguyen, C.S. Fong, , R. Kumar, N. Balasubramanian, S.J. LeeShow More
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Pages: 301 - 305
About the journal
JournalProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA