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Fabrication and RF characterization of zinc oxide based Film Bulk Acoustic Resonator
R. Patel, D. Bansal, V.K. Agrawal, , D. Boolchandani
Published in Academic Press
Volume: 118
Pages: 104 - 115
This work reports fabrication and characterization of Film Bulk Acoustic Resonator (FBAR) to improve the performance characteristics for RF filter and sensing application. Zinc oxide as a piezoelectric (PZE) material was deposited on an aluminum bottom electrode using an RF magnetron sputtering, at room temperature, and gold as top electrode for the resonator. Tetramethyl ammonium hydroxide (TMAH) setup was used for bulk silicon etching to make back side cavity to confine the acoustic signals. The transmission characteristics show that the FBARs have a central frequency at 1.77 GHz with a return loss of −10.7 dB. © 2018 Elsevier Ltd
About the journal
JournalSuperlattices and Microstructures
PublisherAcademic Press