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Erratum: Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices (AIP Advances (2015) 5 (067140))Published in American Institute of Physics Inc.
2015
DOI: 10.1063/1.4926425
Volume: 5
Issue: 7
Topics: Residual stress (53)%53% related to the paper
View more info for "Publisher’s Note: “Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices” [AIP Advances 5, 067140 (2015)]"
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Publisher’s Note: “Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices” [AIP Advances 5, 067140 (2015)]. AIP Advances 5, 7 p079901 (2015)] and may be found at https://doi.org/10.1063/1.4926425.
About the journal
| Journal | Data powered by SciSpaceAIP Advances |
|---|---|
| Publisher | Data powered by SciSpaceAmerican Institute of Physics Inc. |
| ISSN | 21583226 |
Authors (1)
Mahesh Kumar- Department of Electrical Engineering IIT Jodhpur
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