Get all the updates for this publication
Articles
Electronic structure and polaronic excitation in FeVO4Published in
2011
DOI: 10.1063/1.3646402
Volume: 99
Issue: 14
We investigated the electronic properties of FeVO4 films using optical, valence band x-ray photoelectron, and infrared spectroscopies. These studies show that FeVO4 is a direct bandgap system with a 2.7 eV gap with the Fermi level in the middle of the valence band maximum and conduction band minimum. A polaronic excitation is also observed in the middle infrared, indicating the importance of charge-lattice coupling in this multiferroic material. Fits to a model for the optical response of large polarons yield a binding energy of approximately 130 meV. © 2011 American Institute of Physics.
Topics: Band gap (66)%66% related to the paper, Quasi Fermi level (66)%66% related to the paper, Semimetal (63)%63% related to the paper, Direct and indirect band gaps (63)%63% related to the paper and Fermi level (60)%60% related to the paper
View more info for "Electronic structure and polaronic excitation in FeVO4"
Publisher Copy Version
Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Electronic structure and polaronic excitation in FeVO4. Applied Physics Letters 99, 14 p141908 (2011)] and may be found at https://doi.org/10.1063/1.3646402.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
Ambesh Dixit- Department of Physics IIT Jodhpur
- Microbial fuel cell powered by lipid extracted algae: A promising system for algal lipids and power generation
- Interfacial layer assisted, forming free, and reliable bipolar resistive switching in solution processed BiFeO3 thin films
- Robust non-volatile bipolar resistive switching in sol-gel derived BiFeO3 thin films
- Reliable and forming free bipolar resistive switching in solution derived Ag/BiFe0.99Cr0.01O3/FTO device
