We carried out electrical and impedance studies on solution derived Al:ZnO/ZnO/CdS/Cu2ZnSnS4/Mo/Glass multilayered solar cell structures to understand their impact on photovoltaic performance. The Cu2ZnSnS4 layer is synthesized on a molybdenum (Mo) coated soda lime glass substrate as an absorber and characterized intensively to optimize the absorber physical properties. The optimized Cu2ZnSnS4 is p-type with 5.8 × 1017 cm-3 hole carrier concentration. The depletion width of the junction is around 20.5 nm and the diffusion capacitance is ∼35.5 nF for these devices. We observed relatively large minority carrier life time ∼23 μs for these structures using open voltage decay analysis. The measured Cu2ZnSnS4/MoS2 and Cu2ZnSnS4/CdS interface resistances are 7.6 kΩ and 12.5 kΩ, respectively. The spatial inhomogeneities are considered and the corresponding resistance is ∼11.4 kΩ. The impedance measurements suggest that in conjunction with series resistance ∼350 Ω, the interface and spatial inhomogeneity resistances also give a significant contribution to the photovoltaic performance. © 2018 Author(s).