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Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy
M.K. Rajpalke, B. Roul, T.N. Bhat, , N. Sinha, V.M. Jali, S.B. Krupanidhi
Published in Wiley-VCH Verlag
Volume: 11
Issue: 3-4
Pages: 932 - 935
Nonpolar a-plane InN films were grown on r-plane sapphire substrate by plasma assisted molecular beam epitaxy with GaN underlayer. Effect of growth temperature on structural, morphological, and optical properties has been studied. The growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study. The film grown at 500 °C shows better crystallinity with the rocking curve FWHM 0.67° and 0.85° along [0 0 0 1] and [1 -1 0 0] directions, respectively. Scanning electron micrograph shows formation of Indium droplets at higher growth temperature. Room tem-perature absorption spectra show growth temperature dependent band gap variation from 0.74-0.81 eV, consistent with the expected Burstein-Moss effect. The rectifying behaviour of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
About the journal
JournalData powered by TypesetPhysica Status Solidi (C) Current Topics in Solid State Physics
PublisherData powered by TypesetWiley-VCH Verlag