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Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy
, M.K. Rajpalke, B. Roul, T.N. Bhat, A.T. Kalghatgi, S.B. Krupanidhi
Published in
Volume: 249
Issue: 1
Pages: 58 - 61
Hexagonal Ge3N4 layer was prepared on Ge surface by in situ direct atomic source nitridation and it is promising buffer layer to grow GaN on Ge (111). The valence band offset (VBO) of GaN/Ge3N4/Ge heterojunctions is determined by X-ray photoemission spectroscopy. The valence band (VB) of Ge3N4 is found to be 0.38±0.04eV above the GaN valance band and 1.14±0.04eV below the Ge. The GaN/Ge3N4 and Ge3N4/Ge are found type-II and type-I heterojunctions, respectively. The exact measurements of the VBO and conduction band offset (CBO) are important for use of GaN/Ge3N4/Ge (111) heterosystems. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
About the journal
JournalPhysica Status Solidi (B) Basic Research