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Design Optimization Techniques in Nanosheet Transistor for RF Applications
P. Kushwaha, A. Dasgupta, M.-Y. Kao, , S. Salahuddin, C. Hu
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 67
Issue: 10
Pages: 4515 - 4520
Nanosheet gate-all-around transistors are analyzed for RF applications using calibrated TCAD simulations. The effects of stack spacing and number of stacks on device performance are studied and a substack design for improved RF performance is proposed. The novel substack design can improve cut-off frequency ( ${F}_{{t}}$ ) by 10% and minimum number of substacks and minimum substack spacing should be used. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.