Nanosheet gate-all-around transistors are analyzed for RF applications using calibrated TCAD simulations. The effects of stack spacing and number of stacks on device performance are studied and a substack design for improved RF performance is proposed. The novel substack design can improve cut-off frequency ( ${F}_{{t}}$ ) by 10% and minimum number of substacks and minimum substack spacing should be used. © 1963-2012 IEEE.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

P. Kushwaha

A. Dasgupta

M.-Y. Kao

S. Salahuddin

C. Hu

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Design Optimization Techniques in Nanosheet Transistor for RF Applications

IEEE Transactions on Electron Devices

Journal	Data powered by TypesetIEEE Transactions on Electron Devices
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN	00189383