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Articles
Design Optimization Techniques in Nanosheet Transistor for RF ApplicationsPublished in Institute of Electrical and Electronics Engineers Inc.
2020
Volume: 67
Issue: 10
Pages: 4515 - 4520
Nanosheet gate-all-around transistors are analyzed for RF applications using calibrated TCAD simulations. The effects of stack spacing and number of stacks on device performance are studied and a substack design for improved RF performance is proposed. The novel substack design can improve cut-off frequency ( ${F}_{{t}}$ ) by 10% and minimum number of substacks and minimum substack spacing should be used. © 1963-2012 IEEE.
Topics: Stack (abstract data type) (54)%54% related to the paper, Transistor (53)%53% related to the paper, Logic gate (51)%51% related to the paper, Cutoff frequency (50)%50% related to the paper and Radio frequency (50)%50% related to the paper
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Figures & Tables (10)
Fig. 1. Illustration of (a) single-stack Nanosheet transistor ... 
Fig. 2. FinFET and Nanosheet transistor at same effective ... 
Fig. 4. (a) Nanosheet transistor cut along Y-Y direction ... 
Fig. 3. (a) Illustration of spacing between channels in FinFET ... 
Fig. 5. For a given Weff (a) drain current is not a function ... 
Fig. 8. (a) Integral is done from point A to A’ shown in insets ... 
Fig. 6. (a) Multistack gate-all-around transistor with Nstack ... 
Fig. 7. (a) Substack gate-all-around transistor. The minimum ... - 2 figures hidden
About the journal
| Journal | Data powered by SciSpaceIEEE Transactions on Electron Devices |
|---|---|
| Publisher | Data powered by SciSpaceInstitute of Electrical and Electronics Engineers Inc. |
| ISSN | 00189383 |
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