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Design of MEMS based 'cross over junction' for T-type switch
K. Maninder, D. Bansal,
Published in American Institute of Physics Inc.
Volume: 1724
This paper presents a novel design approach of T-type RF MEMS switch cross over junction, implemented using symmetric toggle switch (STS) as a basic building block. T-type switches are key elements for designing redundancy switch matrices. Proposed design is a dual type switch, i.e. under operation same bridge is used as an ohmic series switch as well as a capacitive shunt switch. This reconfigurable switch constitutes the cross over junction part for the T-type switch. Simulated results show an insertion loss of < 0.2 dB upto 10 Ghz and isolation is better than -20 dB over a band of 5 Ghz through capacitive path and is better than -80 dB up-to 10 Ghz through ohmic contact path. STS as a building block is used for designing cross over junction and is a technologically mature device. The designed actuation voltage of this cross over switch is 4.75 Volts and simulated resonant frequency is 3.253 KHz. © 2016 Author(s).
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JournalData powered by TypesetAIP Conference Proceedings
PublisherData powered by TypesetAmerican Institute of Physics Inc.