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Defect-free ZnO nanorods for low temperature hydrogen sensor applicationsPublished in American Institute of Physics Inc.
2014
DOI: 10.1063/1.4902520
Volume: 105
Issue: 21
Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission electron microscopy studies confirmed the single crystalline wurtzite structure of ZnO. Absence of wide band emission in photoluminescence spectra showed defect-free growth of ZnO NRs which was further conformed by diamagnetic behavior of the NRs. H2 sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response (∼21.6 s) and recovery times (∼27 s) of ZnO NRs/Si/ZnO NRs sensors. Proposed H2 sensor operates at low temperature (∼70 °C) unlike the existing high temperature (>150 °C) sensors. © 2014 AIP Publishing LLC.
Topics: Wurtzite crystal structure (54)%54% related to the paper, Nanorod (52)%52% related to the paper and Hydrogen sensor (51)%51% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Defect-free ZnO nanorods for low temperature hydrogen sensor applications. Applied Physics Letters 105, 21 p213103 (2014)] and may be found at https://doi.org/10.1063/1.4902520.
About the journal
| Journal | Data powered by TypesetApplied Physics Letters |
|---|---|
| Publisher | Data powered by TypesetAmerican Institute of Physics Inc. |
| ISSN | 00036951 |
| Open Access | No |
Authors (1)
Mahesh Kumar- Department of Electrical Engineering IIT Jodhpur
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