In this work, a TCAD based approach is presented to model electrical behavior of TIPS-Pentacene: polymer blend organic field-effect transistors (OFETs). Stress induced and temperature induced effects are also captured, thereby accurately modeling the device behavior under different operating conditions. The framework is validated against experimental results and is then used to estimate the effect of temperature on characteristics of inverter circuit using this device. © 2017 IEEE.

Shree Prakash Tiwari

Department of Electrical Engineering

IIT Jodhpur

A.K. Mahato

D. Bharti

V. Joshi

V. Raghuwanshi

&ldquo;IIT Jodhpur is committed to impart quality education to facilitate the creation of qualified, competent and responsible human resources to meet the emerging technological challenges of the world. It is working towards creating an equitable learning platform that is positive, accessible and effective in the face of the modern societal and scientific advancements.

Flexibility in curriculum, in all its academic programs, encompassing elements of teaching, research, creativity, innovation and entrepreneurship is the most unique feature of IIT Jodhpur. The Department of Science and Technology (DST), under the National Mission on Cyber Physical Systems, has identified IIT Jodhpur as a Technology &amp; Innovation Hub in the area of Augmented Reality and Virtual Reality. The institute has also been nominated as the coordinator for the Jodhpur City and Knowledge Cluster by the Office of Principal Scientific Adviser, Government of India.

The sprawling 852-acre IIT Jodhpur campus is a majestic tribute to the deep-rooted diverse cultural heritage of the region. The campus is an architectural masterpiece, which is slated to become an international exemplar of sustainability with net-zero energy, and advanced water and waste management strategies.&rdquo;

Journal	Data powered by SciSpace2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
Publisher	Data powered by SciSpaceInstitute of Electrical and Electronics Engineers Inc.
ISSN	2378-377X
Open Access	No