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Complementary-like inverters based on an ambipolar solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative
, J. Kim, K.A. Knauer, D.K. Hwang, L.E. Polander, S. Barlow, S.R. Marder, B. Kippelen
Published in Elsevier B.V.
Volume: 13
Issue: 7
Pages: 1166 - 1170
We report on high-mobility top-gate organic field-effect transistors (OFETs) and complementary-like inverters fabricated with a solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative as the channel semiconductor and a CYTOP/Al2O3 bilayer as the gate dielectric. The OFETs showed ambipolar behavior with average electron and hole mobility values of 1.2 and 0.01 cm2 V-1 s-1, respectively. Complementary-like inverters fabricated with two ambipolar OFETs showed hysteresis-free voltage transfer characteristics with negligible variations of switching threshold voltages and yielded very high DC gain values of more than 90 V/V (up to 122 V/V) at a supply voltage of 25 V. © 2012 Elsevier B.V. All rights reserved.
About the journal
JournalData powered by TypesetOrganic Electronics
PublisherData powered by TypesetElsevier B.V.