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Compact Model for Geometry Dependent Mobility in Nanosheet FETs
A. Dasgupta, S.S. Parihar, , P. Kushwaha, Y.S. Chauhan, C. Hu
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 41
Issue: 3
Pages: 313 - 316
We propose an updated compact model for mobility in Nanosheet FETs. This is necessary since Nanosheet FETs exhibit significant mobility degradation with thickness and width scaling caused by centroid shift, changing effective mass due to quantum confinement as well as various crystal orientations of the various conduction planes. The model takes all of these effects into account. It has been implemented in Verilog-A and validated with experimental data. To the best of our knowledge, this is the first compact model capturing the effect of nanosheet scaling on mobility. © 1980-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Electron Device Letters
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.