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Coexistence of anion and cation vacancy defects in vacuum-annealed In2O3 thin films
C. Sudakar, , S. Kumar, M.B. Sahana, G. Lawes, R. Naik, V.M. Naik
Published in
2010
Volume: 62
   
Issue: 2
Pages: 63 - 66
Abstract
We report on the defect structure and composition of vacuum-annealed In2O3 (VA-In2O3) ferromagnetic thin films. VA-In2O3 is highly (∼7 at.%) oxygen deficient. High-resolution microscopy reveals disordered glassy surface layers and crystalline defect states, O and In vacancies, and In-In clustering, predominantly in the vicinity of the surface. These defects are not observed in as-deposited In2O3 films. These structural defects are important for understanding many of the novel properties found in non-stoichiometric In2O3, including high conductivity and room-temperature ferromagnetism. © 2009 Acta Materialia Inc.
About the journal
JournalScripta Materialia
ISSN13596462