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Charge-carrier injection, extraction and trapping dynamics in organic thin-film transistors based on different organic semiconductors evaluated by displacement current measurements
S. Bisoyi, R. Rodel, U. Zschieschang, K. Takimiya, H. Klauk,
Published in Institute of Electrical and Electronics Engineers Inc.
Pages: 73 - 74
Organic thin-film transistors (TFTs) have potential as pixel drivers in flexible active-matrix organic light-emitting diode displays [1]. Hence it is essential to analyze the charge-carrier injection and extraction dynamics of organic TFTs to gain a better understanding of the trapping and detrapping at the TFT interfaces. From the current-voltage characteristics of the TFTs, many important parameters can be extracted, such as carrier mobility, threshold voltage, on/off ratio, subthreshold slope and transconductance. But to quantitatively evaluate the trapping and detrapping dynamics, displacement current measurements on two-terminal long-channel capacitors (LCCs) are far more useful [2, 3]. The cross-section and the layout of an LCC are schematically shown in Fig. 1. Unlike a TFT, an LCC has only one contact, so that carriers are injected into and extracted from the semiconductor through the same contact. To increase the signal-to-noise ratio, a very large channel length (up to 6 cm) is employed. While Liang et al. have performed displacement current measurements on pentacene-based LCCs [2,3], we report here on displacement current measurements on LCCs based on four different organic semiconductors: pentacene, dinaptho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), 2,9-didecyl-DNTT (C 10-DNTT) and diphenyl-DNTT (DPh-DNTT). In TFTs, these semiconductors show hole mobilities ranging from 1 to 7 cm2/Vs. The goal of the displacement current measurements reported here is to study how the choice of the semiconductor affects the trapping and detrapping dynamics in organic TFTs. © 2014 IEEE.
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JournalData powered by TypesetDevice Research Conference - Conference Digest, DRC
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.