Header menu link for other important links
BSIM6: Analog and RF compact model for bulk MOSFET
Y.S. Chauhan, S. Venugopalan, M.-A. Chalkiadaki, M.A.U. Karim, , S. Khandelwal, N. Paydavosi, J.P. Duarte, C.C. Enz, A.M. NiknejadShow More
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 61
Issue: 2
Pages: 234 - 244
BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations, e.g., harmonic balance simulation. The model is fully scalable with geometry, biases, and temperature. The model has a physical charge-based capacitance model including polydepletion and quantum-mechanical effect thereby giving accurate results in small signal and transient simulations. The BSIM6 model has been extensively validated with industry data from 40-nm technology node. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.