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BSIM-IMG with improved surface potential calculation recipe
P. Kushwaha, C. Yadav, , Y.S. Chauhan, J. Srivatsava, S. Khandelwal, J.P. Duarte, C. Hu
Published in Institute of Electrical and Electronics Engineers Inc.
In this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests. © 2014 IEEE.