In this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests. © 2014 IEEE.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

P. Kushwaha

C. Yadav

Y.S. Chauhan

J. Srivatsava

S. Khandelwal

J.P. Duarte

C. Hu

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BSIM-IMG with improved surface potential calculation recipe

11th IEEE India Conference: Emerging Trends and Innovation in Technology, INDICON 2014

Journal	Data powered by Typeset11th IEEE India Conference: Emerging Trends and Innovation in Technology, INDICON 2014
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.