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BSIM-IMG: Compact model for RF-SOI MOSFETs
P. Kushwaha, , S. Khandelwal, J.-P. Duarte, A. Medury, C. Hu, Y.S. Chauhan
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 2015-August
Pages: 279 - 280
Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz. © 2015 IEEE.
About the journal
JournalData powered by TypesetDevice Research Conference - Conference Digest, DRC
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.