Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz. © 2015 IEEE.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

P. Kushwaha

S. Khandelwal

J.-P. Duarte

A. Medury

C. Hu

Y.S. Chauhan

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BSIM-IMG: Compact model for RF-SOI MOSFETs

Device Research Conference - Conference Digest, DRC

Journal	Data powered by TypesetDevice Research Conference - Conference Digest, DRC
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN	15483770