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BSIM compact model of quantum confinement in advanced nanosheet FETs
A. Dasgupta, S.S. Parihar, P. Kushwaha, , M.-Y. Kao, S. Salahuddin, Y.S. Chauhan, C. Hu
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 67
Issue: 2
Pages: 730 - 737
We propose a compact model for nanosheet FETs that take the effects of quantum confinement into account. The model captures the nanosheet width and thickness dependence of the electrostatic dimension, density of states, effective mass, subband energies, and threshold voltages and includes them in the charge calculation, resulting in an accurate terminal charge and current characteristics. The model has been implemented using Verilog-A in the BSIM-CMG framework for all simulations. It has been validated with band-structure calculation-based TCAD simulations as well as measured data. We have also highlighted the significance of quantum mechanical effects on analog and RF performance of the device. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.