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BSIM-CMG: Standard FinFET compact model for advanced circuit design
J.P. Duarte, S. Khandelwal, A. Medury, C. Hu, P. Kushwaha, , A. Dasgupta, Y.S. Chauhan
Published in IEEE Computer Society
Volume: 2015-October
Pages: 196 - 201
This work presents new compact models that capture advanced physical effects presented in industry FinFETs. The presented models are introduced into the industry standard compact model BSIM-CMG. The core model is updated with a new unified FinFET model, which calculates charges and currents of transistors with complex fin cross-sections. In addition, threshold voltage modulation from bulk-bias effects and bias dependent quantum mechanical confinement effects are incorporated into the new core model. Short channel effects, affecting threshold voltage and subhtreshold swing, are modeled with a new unified field penetration length, enabling accurate 14nm node FinFET modeling. The new proposed models further assure the BSIM-CMG model's capabilities for circuit design using FinFET transistors for advanced technology nodes. © 2015 IEEE.
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JournalData powered by TypesetEuropean Solid-State Circuits Conference
PublisherData powered by TypesetIEEE Computer Society