In this work, we present the recent and upcoming enhancements of the industry standard BSIM-BULK (formerly BSIM6) model. BSIM-BULK is the latest body referenced compact model for bulk MOSFETs having a unified core, which is developed by the BSIM group for accurate design of analog and RF circuits. The model satisfies the symmetry test for DC and AC, correctly predicts harmonic slope, and exhibits accurate results for RF and analog simulations. In order to further improve the model accuracy for transconductance (gm) and output conductance (gds), an analytical model for bulk charge effect, in both current and capacitance, is implemented. Several other advanced models are added to capture real device physics. These include: parasitic current at the shallow trench isolation edges; leakage current components in zero threshold voltage native devices; new model for NQS to capture the NQS effects up to the millimeter wave regime; self heating effect; and heavily halo implanted MOSFET's anomalous gm, flicker noise and IDS mismatch. All these enhancements have been implemented to high standards of computational efficiency and robustness. © 2019 IEEE.