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Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopyPublished in
2011
DOI: 10.1063/1.3596520
Volume: 109
Issue: 12
The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface. © 2011 American Institute of Physics.
Topics: Band offset (62)%62% related to the paper, Band gap (59)%59% related to the paper, Heterojunction (57)%57% related to the paper and Photoemission spectroscopy (52)%52% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy. Journal of Applied Physics 109, 12 p123707 (2011)] and may be found at https://doi.org/10.1063/1.3596520.
About the journal
| Journal | Journal of Applied Physics |
|---|---|
| ISSN | 00218979 |
Authors (1)
Mahesh Kumar- Department of Electrical Engineering IIT Jodhpur
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