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Analytical modeling of flicker noise in halo implanted MOSFETs
, S. Khandelwal, S. Dey, C. Hu, Y.S. Chauhan
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 3
Issue: 4
Pages: 355 - 360
An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is the first compact model implementation capturing such effect and show distinct improvements over other existing noise models. The model is compatible with BSIM6, the latest industry standard model for bulk MOSFET, and is validated with measurements from 45-nm low-power CMOS technology node. © 2013 IEEE.
About the journal
JournalData powered by TypesetIEEE Journal of the Electron Devices Society
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.