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Analytical modeling of flicker noise in halo implanted MOSFETs
, S. Khandelwal, S. Dey, C. Hu, Y.S. Chauhan
Published in Institute of Electrical and Electronics Engineers Inc.
2015
Volume: 3
   
Issue: 4
Pages: 355 - 360
Abstract
An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is the first compact model implementation capturing such effect and show distinct improvements over other existing noise models. The model is compatible with BSIM6, the latest industry standard model for bulk MOSFET, and is validated with measurements from 45-nm low-power CMOS technology node. © 2013 IEEE.
Figures & Tables (6)
  • Figure-0
    Fig. 1. Drain current flicker noise power spectral density ... Expand
  • Figure-1
    Fig. 3. Small signal analysis of two transistor noise circuit. ... Expand
  • Figure-2
    Fig. 2. Representation of MOSFET for noise modeling: Channel ... Expand
  • Figure-3
    Fig. 4. Model validation with long channel device ... Expand
  • Figure-4
    Fig. 5. Contribution factor of halo and channel transistors ... Expand
  • Figure-5
    Fig. 6. Simulated drain current noise spectral density vs drain ... Expand
About the journal
JournalData powered by SciSpaceIEEE Journal of the Electron Devices Society
PublisherData powered by SciSpaceInstitute of Electrical and Electronics Engineers Inc.
ISSN21686734