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Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model
, C. Gupta, P. Kushwaha, C. Yadav, J.P. Duarte, S. Khandelwal, C. Hu, Y.S. Chauhan
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 3
Issue: 3
Pages: 240 - 243
In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained. © 2013 IEEE.
About the journal
JournalData powered by TypesetIEEE Journal of the Electron Devices Society
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.