In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained. © 2013 IEEE.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

C. Gupta

P. Kushwaha

C. Yadav

J.P. Duarte

S. Khandelwal

C. Hu

Y.S. Chauhan

Fulltext

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Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model

IEEE Journal of the Electron Devices Society

Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

Journal	Data powered by SciSpaceIEEE Journal of the Electron Devices Society
Publisher	Data powered by SciSpaceInstitute of Electrical and Electronics Engineers Inc.
ISSN	21686734