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A wedge tunnel FET device for larger tunneling area and improved on current
A. Tyagi, V. Joshi,
Published in Institute of Electrical and Electronics Engineers Inc.
Pages: 913 - 915
In an attempt to improve ON current and current ON/OFF ratio in tunnel field-effect Transistors (TFETs), a new wedge shaped structure for TFET named Wedge-TFET (WTFET) is proposed. This proposed device is a double gate structure, showing ∼3 times higher ON current compared to planar double gate TFET device working at supply voltage of 0.6 to 1.0 V. This increase is mainly due to increase in the tunneling area. In addition to increased current, W-TFET also shows high current ON/OFF ratio of the order ∼1012. The subthreshold swing values are slightly higher for W-TFET compared to our simulated DG-TFET, however, both of them fall in the range of 40 to 50 mV/dec. The W-TFET device with higher ON current and current ON/OFF ratio and with almost same area requirement can be a potential candidate for future low voltage applications. © 2015 IEEE.
About the journal
JournalData powered by TypesetIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.