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A complementary switching mechanism for organic memory devices to regulate the conductance of binary statesPublished in American Institute of Physics Inc.
2016
DOI: 10.1063/1.4953197
Volume: 108
Issue: 23
We have fabricated an organic non-volatile memory device wherein the ON/OFF current ratio has been controlled by varying the concentration of a small organic molecule, 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ), in an insulating matrix of a polymer Poly(4-vinylphenol) (PVP). A maximum ON-OFF ratio of 106 is obtained when the concentration of DDQ is half or 10 wt. % of PVP. In this process, the switching direction for the devices has also been altered, indicating the disparity in conduction mechanism. Conduction due to metal filament formation through the active material and the voltage dependent conformational change of the organic molecule seem to be the motivation behind the gradual change in the switching direction. © 2016 Author(s).
Topics: Organic memory (53)%53% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [A complementary switching mechanism for organic memory devices to regulate the conductance of binary states. Applied Physics Letters 108, 23 p233301 (2016)] and may be found at https://doi.org/10.1063/1.4953197.
About the journal
| Journal | Data powered by TypesetApplied Physics Letters |
|---|---|
| Publisher | Data powered by TypesetAmerican Institute of Physics Inc. |
| ISSN | 00036951 |
| Open Access | No |
Authors (1)
Satyajit Sahu- Department of Physics IIT Jodhpur
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